Нет в наличии
The 74HCT2G125DP,125 is a high-speed, Si-gate CMOS device.
Features:
Wide supply voltage range from 2.0 V to 6.0 V
Symmetrical output impedance
High noise immunity
Low power consumption
Balanced propagation delays
ESD protection: HBM JESD22-A114E exceeds 2000 V MM JESD22-A115-A exceeds 200 V
HBM JESD22-A114E exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C
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