The MR4A16BCMA35 is a magnetoresistive random access memory (MRAM) device organized as 1,048,576 words of 16 bits. It is available in a small footprint 48-pin ball grid array (BGA) package.
Features:
+3.3 Volt power supply
Fast 35 ns read/write cycle
SRAM compatible timing
Unlimited read & write endurance
Data always non-volatile for >20 years at temperature
RoHS-compliant small footprint BGA and TSOP2 package
AEC-Q100 Grade 1 option in TSOP2 package
Benefits:
One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems for simpler, more efficient designs
Improves reliability by replacing battery-backed SRAM
View the available MR4A16B series of MRAMs
View the available MR4A16B series of MRAMs
Категория:
Магниторезистивная RAM (MRAM)
Артикул:
7002866
Наличие:
950
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Package Style:
BGA-48
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Mounting Method:
Surface Mount
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ECCN:
EAR99
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Информация PCN:
View PCN Information
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Статус части:
Active
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Размер минимального заказа, шт.:
480
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Производитель:
Everspin Technologies
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Тикер производителя:
EVS
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Модель модификации:
MR4A16BCMA35
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Модель:
tray
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Артикул (SKU):
7002866
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Ссылка на предложение поставщика:
https://www.futureelectronics.com/p/semiconductors--memory--RAM--nvram--mram/mr4a16bcma35-everspin-technologies-7002866
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Memory Density:
16Mb
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Memory Organization:
1 M x 16
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Supply Voltage-Nom:
3V to 3.6V
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Access Time-Max:
35ns
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Скачать Datasheet download:
https://www.everspin.com/file/156629/download
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Interface Type:
Parallel
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Temperature Range:
-40°C to +85°C