The Bipolar Power Transistor is designed for use as a high-frequency driver in audio amplifiers.
Features:
DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc
hFE = 40 (Min) @ IC = 3.0 Adc
hFE = 20 (Min) @ IC = 4.0 Adc
Collector-Emitter Sustaining Voltage VCEO(sus) = 120 Vdc (Min) MJE15028, MJE15029 VCEO(sus) = 150 Vdc (Min) - MJE15030, MJE15031
VCEO(sus) = 120 Vdc (Min) MJE15028, MJE15029
VCEO(sus) = 150 Vdc (Min) - MJE15030, MJE15031
High Current Gain - Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc
fT = 30 MHz (Min) @ IC = 500 mAdc
TO-220AB Compact Package
Pb-Free Packages are Available
Категория:
Биполярные транзисторы (BJT)
Артикул:
5190556
Наличие:
971
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Package Style:
TO-220-3 (TO-220AB)
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Mounting Method:
Flange Mount
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ECCN:
EAR99
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Информация PCN:
N/A
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Статус части:
Active
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Размер минимального заказа, шт.:
50
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Производитель:
Onsemi
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Тикер производителя:
ON
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Модель модификации:
MJE15030G
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Модель:
tube
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Артикул (SKU):
5190556
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Ссылка на предложение поставщика:
https://www.futureelectronics.com/p/semiconductors--discretes--transistors--bipolar-transistors/mje15030g-onsemi-5190556
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Type:
Power Transistor
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Polarity:
NPN
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CE Voltage-Max:
120V
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Collector Current Max:
8A
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Power Dissipation-Tot:
2W
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DC Current Gain-Min:
40
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Скачать Datasheet MJE15028-D.PDF:
http://www.onsemi.com/pub/Collateral/MJE15028-D.PDF
