EEPROM Microchip 25LC512-I/P, 512Kb, SPI, PDIP-8

The 25LC512 is a 512 Kbit serial EEPROM memory with byte-level and page-level serial EEPROM functions. It also features Page, Sector and Chip erase functions typically associated with Flash-based products. These functions are not required for byte or page write operations. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled by a Chip Select [CS(bar)] input. Features: 20 MHz max. Clock Speed Byte and Page-level Write Operations 128-byte page 5 ms max No page or sector erase required 128-byte page 5 ms max No page or sector erase required Low-Power CMOS Technology Max. Write Current: 5 mA at 5.5 V, 20 MHz Read Current: 10 mA at 5.5 V, 20 MHz Standby Current: 1 μA at 2.5 V (Deep powerdown) Max. Write Current: 5 mA at 5.5 V, 20 MHz Read Current: 10 mA at 5.5 V, 20 MHz Standby Current: 1 μA at 2.5 V (Deep powerdown) Electronic Signature for Device ID Self-Timed Erase and Write cycles Page Erase (5 ms, typical) Sector Erase (10 ms/sector, typical) Bulk Erase (10 ms, typical) Page Erase (5 ms, typical) Sector Erase (10 ms/sector, typical) Bulk Erase (10 ms, typical) Sector Write Protection (16 K byte/sector) Protect none, 1/4, 1/2 or all of array Protect none, 1/4, 1/2 or all of array Built-In Write Protection Power-on/off data protection circuitry Write enable latch Write-protect pin Power-on/off data protection circuitry Write enable latch Write-protect pin High Reliability Endurance: 1 Million erase/write cycles Data Retention: >200 years ESD Protection: >4000 V Endurance: 1 Million erase/write cycles Data Retention: >200 years ESD Protection: >4000 V Temperature Ranges Supported: Industrial (I): -40°C to +85°C Industrial (I): -40°C to +85°C Pb-free and RoHS Compliant